High Performance MoS2 N-Channel MOSFFTs

被引：0
|
作者：
Liu, Xiwen [1 ,2 ]
Ma, Zichao [3 ,4 ]
Chan, Mansun [3 ,4 ]
Liao, Wugang [1 ]
Zhang, Lining [1 ]
机构：
[1] Shenzhen Univ, Inst Microscale Optoelect, Shenzhen, Peoples R China
[2] Hong Kong Univ Sci & Technol HKUST, Shenzhen Res Inst, Shenzhen, Peoples R China
[3] HKUST Shenzhen Res Inst, Shenzhen, Peoples R China
[4] Hong Kong Univ Sci & Technol, Dept ECE, Hong Kong, Peoples R China
来源：
2019 8TH INTERNATIONAL SYMPOSIUM ON NEXT GENERATION ELECTRONICS (ISNE) | 2019年
关键词：
Two-dimensional (2D); MoS2; high performance; 2D MOSFETs;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we have demonstrated high performance back-gated MoS2 MOSFETs with scandium (Sc) contact and high-k ZrO2 dielectrics for improved contact resistance and electron mobility. Record drain current of 200 pAiiim has been achieved for 1-mu m channel length multilayer MoS2 MOSFETs on ZrO2/Si substrates. The intrinsic contact resistance of low work function metal Sc on exfoliated MoS2 with strong gating effect on source region is significantly decreased to 0.9 k Omega.mu m. By taking the impact of contact resistance into consideration, the intrinsic mobility extracted from Y function technique is 132 cm(2)/Vs, 3 times higher than SiO2 substrate, originating from the significant screening effect of high-k ZrO2 dielectrics on the impurity scattering.
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页数：3
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