Pressure-Dependent Phonon Scattering of Layered GaSe Prepared by Mechanical Exfoliation*

被引：3
|
作者：
Zheng, Yu-Lu [1 ]
Li, Liang [1 ]
Li, Fang-Fei [1 ]
Zhou, Qiang [1 ]
Cui, Tian [1 ]
机构：
[1] Jilin Univ, Coll Phys, State Key Lab Superhard Mat, Changchun 130000, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2020年 / 37卷 / 08期
基金：
中国国家自然科学基金;
关键词：
82; 80; Gk; 81; 40; Vw; 73; 22; -f; 74; 62; Fj;
D O I：
10.1088/0256-307X/37/8/088201
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Few-layered gallium selenide (GaSe) is obtained by using the mechanical exfoliation method, and its properties are characterized by photoluminescence and Raman spectroscopy. The pressure-dependent phonon scatterings of bulk, few-layered, oxidized few-layered GaSe are characterized up to 30 GPa by using a diamond anvil cell with inert argon used as the pressure transmission medium. All the GaSe samples processed a phase transition around 28 GPa. A new vibration mode at 250 cm(-1)is found in oxidized few-layered GaSe by Raman spectra, which is indexed as the Raman vibration mode of alpha-Se.
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页数：5
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