Pressure-Dependent Phonon Scattering of Layered GaSe Prepared by Mechanical Exfoliation*

被引：3

作者：

Zheng, Yu-Lu ^{[1
]}

Li, Liang ^{[1
]}

Li, Fang-Fei ^{[1
]}

Zhou, Qiang ^{[1
]}

Cui, Tian ^{[1
]}

机构：

[1] Jilin Univ, Coll Phys, State Key Lab Superhard Mat, Changchun 130000, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2020年 / 37卷 / 08期

基金：

中国国家自然科学基金;

关键词：

82; 80; Gk; 81; 40; Vw; 73; 22; -f; 74; 62; Fj;

D O I：

10.1088/0256-307X/37/8/088201

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Few-layered gallium selenide (GaSe) is obtained by using the mechanical exfoliation method, and its properties are characterized by photoluminescence and Raman spectroscopy. The pressure-dependent phonon scatterings of bulk, few-layered, oxidized few-layered GaSe are characterized up to 30 GPa by using a diamond anvil cell with inert argon used as the pressure transmission medium. All the GaSe samples processed a phase transition around 28 GPa. A new vibration mode at 250 cm(-1)is found in oxidized few-layered GaSe by Raman spectra, which is indexed as the Raman vibration mode of alpha-Se.

引用

页数：5

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