Enhanced Charge Carrier Mobility in Two-Dimensional High Dielectric Molybdenum Oxide

被引：357

作者：

Balendhran, Sivacarendran ^{[1
,2
]}

Deng, Junkai ^{[3
]}

Ou, Jian Zhen ^{[1
,2
]}

Walia, Sumeet ^{[1
,2
]}

Scott, James ^{[1
,2
]}

Tang, Jianshi ^{[4
]}

Wang, Kang L. ^{[4
]}

Field, Matthew R. ^{[5
]}

Russo, Salvy ^{[5
]}

Zhuiykov, Serge ^{[6
]}

Strano, Michael S. ^{[7
]}

Medhekar, Nikhil ^{[3
]}

Sriram, Sharath ^{[1
,2
]}

Bhaskaran, Madhu ^{[1
,2
]}

Kalantar-zadeh, Kourosh ^{[1
,2
]}

机构：

[1] RMIT Univ, Sch Elect & Comp Engn, MicroNanoElect & Sensor Technol Res Grp, Melbourne, Vic, Australia

[2] RMIT Univ, Sch Elect & Comp Engn, Funct Mat & Microsyst Res Grp, Melbourne, Vic, Australia

[3] Monash Univ, Dept Mat Engn, Clayton, Vic 3168, Australia

[4] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90024 USA

[5] RMIT Univ, Sch Appl Sci, Melbourne, Vic, Australia

[6] CSIRO, Mat Sci & Engn Div, Highett, Vic, Australia

[7] MIT, Dept Chem Engn, Cambridge, MA 02139 USA

来源：

ADVANCED MATERIALS | 2013年 / 25卷 / 01期

基金：

澳大利亚研究理事会;

关键词：

two-dimensional materials; MoO3; field effect transistors; carrier mobility; intercalation; THIN-FILMS; MOO3; ALPHA-MOO3;

D O I：

10.1002/adma.201203346

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate that the energy bandgap of layered, high-dielectric alpha-MoO3 can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with alpha-MoO3 of similar to 11 nm thickness and carrier mobilities larger than 1100 cm(2) V-1 s(-1) are obtained.

引用

页码：109 / 114

页数：6

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