Determining the structural parameters of a low-barrier diode with near-surface δ-doping from data on the temperature dependences of the current-voltage characteristics

A technique for determining the structural parameters of low-barrier metal-semiconductor junctions, the tunnel-transparent barrier of which is formed by high-precision near-surface delta-doping, is described. The following nanostructure parameters have been calculated: the delta-layer depth and the surface concentration of the doping impurity in this layer. Analysis is based on the previously proposed model of thermally assisted electron tunneling in the aforementioned junctions and current-voltage characteristics measured in a specific temperature range.