Determining the structural parameters of a low-barrier diode with near-surface δ-doping from data on the temperature dependences of the current-voltage characteristics

被引：0
|
作者：
Murel', A. V. [1 ]
Shashkin, V. I. [1 ]
机构：
[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod, Russia
来源：
JOURNAL OF SURFACE INVESTIGATION | 2012年 / 6卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
SCHOTTKY-BARRIER; CHARGE-TRANSPORT; HEIGHT;
D O I：
10.1134/S1027451012070099
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A technique for determining the structural parameters of low-barrier metal-semiconductor junctions, the tunnel-transparent barrier of which is formed by high-precision near-surface delta-doping, is described. The following nanostructure parameters have been calculated: the delta-layer depth and the surface concentration of the doping impurity in this layer. Analysis is based on the previously proposed model of thermally assisted electron tunneling in the aforementioned junctions and current-voltage characteristics measured in a specific temperature range.
引用
收藏
页码：612 / 615
页数：4
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