Experimental evidence of the two-dimensional electron gas in CdS quantum wells of CdS/ZnSe heterostructures

被引:0
|
作者
Kazukauskas, V
Grün, M
Petillon, S
Storzum, A
Klingshirn, C
机构
[1] Vilnius State Univ, Semicond Phys Dept, LT-2040 Vilnius, Lithuania
[2] Univ Karlsruhe, Inst Appl Phys, DE-76128 Karlsruhe, Germany
来源
关键词
two-dimensional electron gas; CdS/ZnSe quantum heterostructures; sheet carrier density; electron mobility; growth defects;
D O I
10.4028/www.scientific.net/MSF.297-298.237
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report to our knowledge the first experimental observation of a two-dimensional electron gas (2DEG) in CdS quantum wells of CdS/ZnSe quantum heterostructures grown by molecular beam epitaxy (MBE). The CdS layers were about 4 nm thick, and the thicknesses of the doped ZnSe layers and of the growth temperatures of the structures were varied in order to investigate their influence on the 2DEG parameters. The effective sheet concentration of 2DEG reached up to 1.5x10(13) cm(-2). The maximal Hall mobility was nevertheless less than or equal to 380 cm(2)/Vs. Possible scattering mechanisms that cause such values are discussed. Most probably it is scattering by stacking faults or by interface roughness.
引用
收藏
页码:237 / 240
页数:4
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