Demonstration of Silicon-on-insulator mid-infrared spectrometers operating at 3.8μm

被引：106
|
作者：
Muneeb, M. [1 ,2 ,3 ]
Chen, X. [4 ]
Verheyen, P.
Lepage, G.
Pathak, S. [1 ]
Ryckeboer, E. [1 ,2 ]
Malik, A. [1 ,2 ]
Kuyken, B. [1 ,2 ]
Nedeljkovic, M. [4 ]
Van Campenhout, J.
Mashanovich, G. Z. [4 ]
Roelkens, G. [1 ,2 ]
机构：
[1] Ghent Univ IMEC, Dept Informat Technol, Photon Res Grp, B-9000 Ghent, Belgium
[2] Univ Ghent, Ctr Nano & Biophoton NB Photon, B-9000 Ghent, Belgium
[3] Eindhoven Univ Technol, COBRA Res Inst, NL-5600 MB Eindhoven, Netherlands
[4] Univ Southampton, Optoelect Res Ctr, Fac Phys & Appl Sci, Southampton SO9 5NH, Hants, England
来源：
OPTICS EXPRESS | 2013年 / 21卷 / 10期
基金：
英国工程与自然科学研究理事会;
关键词：
WAVE-GUIDES;
D O I：
10.1364/OE.21.011659
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The design and characterization of silicon-on-insulator mid-infrared spectrometers operating at 3.8 mu m is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm. (C) 2013 Optical Society of America
引用
收藏
页码：11659 / 11669
页数：11
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