High-speed silicon electro-optical modulator that can be operated in carrier depletion or carrier injection mode

被引：0

作者：

Spector, S. J. ^{[1
]}

Geis, M. W. ^{[1
]}

Grein, M. E. ^{[1
]}

Schulein, R. T. ^{[1
]}

Yoon, J. U. ^{[1
]}

Lennon, D. M. ^{[1
]}

Gan, F. ^{[2
]}

Zhou, G. -R. ^{[2
]}

Kaertner, F. X. ^{[2
]}

Lyszczarz, T. M. ^{[1
]}

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02420 USA

[2] MIT, Cambridge, MA 02139 USA

来源：

2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-speed silicon optical modulator has been demonstrated which can operate either in forward bias using carrier injection, or in reverse bias using carrier depletion. In forward bias, the device requires less than 10 mW of drive power, but has a low bandwidth of 100 MHz. In reverse bias, the device has a nearly flat response to 18 GHz, but requires 700 mW for large modulation depths. (C)2008 Optical Society of America

引用

页码：94 / +

页数：2

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