A CMOS interdigital capacitive humidity sensor enhanced by a multi-layered structure

被引：0
|
作者：
Huang, Jian-Qiu [1 ]
Chen, Wen-Hao [1 ]
Zhu, Dong-Ping [1 ]
Han, Lei [1 ]
机构：
[1] Southeast Univ, Key Lab MEMS, Minist Educ, Nanjing, Jiangsu, Peoples R China
来源：
2014 IEEE SENSORS | 2014年
基金：
中国国家自然科学基金;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports a novel interdigital capacitive humidity sensor enhanced by a multi-layered structure. Compared with a typical interdigital capacitive humidity sensor, both the sensitive capacitance and the sensitivity were enhanced by the improved structure. According to the test results the sensitivity and hysteresis of the humidity sensor is 10F/% RH and 3% RH respectively. The response time of the humidity senor is 15s.
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页数：4
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