Capacitive humidity sensor in CMOS technology

被引：3
|
作者：
Yan, XW [1 ]
Qin, M [1 ]
Huang, QA [1 ]
机构：
[1] Southeast Univ, Ctr Microelect, Nanjing 210096, Peoples R China
来源：
MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY AND DEVICES | 2001年 / 4601卷
关键词：
humidity sensor; CMOS; on-chip integration;
D O I：
10.1117/12.444724
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
An integrated relative humidity sensor that combines a capacitive sensor with CMOS measurement circuitry on the same silicon chip has been designed, fabricated and tested. The device provides square wave. Its frequency varies with humidity over the entire range from 0% to 100%. The sensor element, which is an integrated part of the circuit, is an interdigital lateral capacitance structure formed by the aluminium layers of the CMOS process.
引用
收藏
页码：43 / 47
页数：5
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