Effect of proton irradiation on the mobility of two-dimensional electron in AlGaN/AlN/GaN high electron mobility transistors at low temperature

被引：11
|
作者：
Tang, Jinjin [1 ]
Liu, Guipeng [1 ]
Zhao, Guijuan [1 ]
Xing, Shu'an [1 ]
Malik, Salamat Ali [1 ]
机构：
[1] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2020年 / 38卷 / 02期
基金：
中国国家自然科学基金;
关键词：
RADIATION-DAMAGE; PERFORMANCE; GALLIUM; GAS; RF; DC;
D O I：
10.1116/1.5134840
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors simulated the damage caused by proton irradiation to the device and analyzed the effect of proton irradiation on two-dimensional electron mobility taking various scattering mechanisms into account. Proton-irradiation simulation of the AlGaN/AlN/GaN HEMT device was carried out to obtain the irradiation simulation results by using SRIM software. Then, considering various scattering mechanisms, the authors established a model to simulate two-dimensional electron mobility under different proton energy and irradiation doses at low temperature. The theoretical data show that proton irradiation significantly decreased the mobility of a two-dimensional electron in a GaN-based HEMT at low temperature.
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页数：6
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