Band gap determination of semiconductor powders via surface photovoltage spectroscopy

被引：38
|
作者：
Gal, D [1 ]
Mastai, Y
Hodes, G
Kronik, L
机构：
[1] Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel
[2] Tel Aviv Univ, Dept Phys Elect, IL-69978 Ramat Aviv, Israel
来源：
JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 10期
关键词：
D O I：
10.1063/1.371562
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Surface photovoltage spectroscopy (SPS) is introduced as a powerful tool for band gap determination of semiconductor powders. The main advantage of SPS is that scattering and reflection do not interfere with the spectra. Therefore, it does not suffer from the inherent limitations of transmission/reflection based spectroscopies, most notably diffuse reflectance spectroscopy (DRS). The principles of the approach are presented and its usefulness is demonstrated by comparing it with DRS for band gap determination of GaAs, InP, CdTe, CdSe, and CdS semiconductor powders. (C) 1999 American Institute of Physics. [S0021-8979(99)01222-0].
引用
收藏
页码：5573 / 5577
页数：5
相关论文
共 50 条
  • [21] DETERMINATION OF THE FLAT-BAND POTENTIAL OF SEMICONDUCTOR PARTICLES IN SUSPENSION BY PHOTOVOLTAGE MEASUREMENT
    ROY, AM
    DE, GC
    SASMAL, N
    BHATTACHARYYA, SS
    [J]. INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 1995, 20 (08) : 627 - 630
  • [22] NEAR-BAND GAP TRANSITIONS IN THE SURFACE PHOTOVOLTAGE SPECTRA FOR GAAS, GAP AND SI SURFACES
    ADAMOWICZ, B
    SZUBER, J
    [J]. SURFACE SCIENCE, 1991, 247 (2-3) : 94 - 99
  • [23] Surface Photovoltage Spectroscopy Observes Sub-Band-Gap Defects in Hydrothermally Synthesized SrTiO3 Nanocrystals
    Ma, Xiaoqing
    Wu, Zongkai
    Roberts, Emily J.
    Han, Ruirui
    Rao, Guodong
    Zhao, Zeqiong
    Lamoth, Maximilian
    Cui, Xiaoli
    Britt, R. David
    Osterloh, Frank
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2019, 123 (41): : 25081 - 25090
  • [24] Band gap measurement of SrFeO3-δ by ultraviolet photoelectron spectroscopy and photovoltage method
    Ghaffari, M.
    Huang, H.
    Tan, O. K.
    Shannon, M.
    [J]. CRYSTENGCOMM, 2012, 14 (21): : 7487 - 7492
  • [25] Semiconductor band gap localization via Gaussian function
    Ullrich, B.
    Brown, G. J.
    Xi, H.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (10)
  • [26] Pump-probe surface photovoltage spectroscopy measurements on semiconductor epitaxial layers
    Jana, Dipankar
    Porwal, S.
    Sharma, T. K.
    Kumar, Shailendra
    Oak, S. M.
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2014, 85 (04):
  • [27] Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering
    Kronik, L
    Shapira, Y
    [J]. SURFACE AND INTERFACE ANALYSIS, 2001, 31 (10) : 954 - 965
  • [28] Electronic transitions in low dimensional semiconductor structures measured by surface photovoltage spectroscopy
    Cavalcoli, Daniela
    Fazio, Maria Antonietta
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 92 : 28 - 38
  • [29] Methodological Investigation of the Band Gap Determination of Solid Semiconductors via UV/Vis Spectroscopy
    Welter, Eike S.
    Garg, Seema
    Glaeser, Roger
    Goepel, Michael
    [J]. CHEMPHOTOCHEM, 2023, 7 (06)
  • [30] SURFACE PHOTOVOLTAGE SPECTROSCOPY - CDS
    ZITZEWIT.PW
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (04): : 723 - 723
12345