Band gap determination of semiconductor powders via surface photovoltage spectroscopy

被引：38
|
作者：
Gal, D [1 ]
Mastai, Y
Hodes, G
Kronik, L
机构：
[1] Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel
[2] Tel Aviv Univ, Dept Phys Elect, IL-69978 Ramat Aviv, Israel
来源：
JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 10期
关键词：
D O I：
10.1063/1.371562
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Surface photovoltage spectroscopy (SPS) is introduced as a powerful tool for band gap determination of semiconductor powders. The main advantage of SPS is that scattering and reflection do not interfere with the spectra. Therefore, it does not suffer from the inherent limitations of transmission/reflection based spectroscopies, most notably diffuse reflectance spectroscopy (DRS). The principles of the approach are presented and its usefulness is demonstrated by comparing it with DRS for band gap determination of GaAs, InP, CdTe, CdSe, and CdS semiconductor powders. (C) 1999 American Institute of Physics. [S0021-8979(99)01222-0].
引用
收藏
页码：5573 / 5577
页数：5
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