Intrinsic and extrinsic origins of low-frequency noise in GaAs/AlGaAs Schottky-gated nanostructures

被引：12

作者：

Hitachi, Kenichi ^{[1
]}

Ota, Takeshi ^{[1
]}

Muraki, Koji ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 19期

关键词：

QUANTUM POINT CONTACTS;

D O I：

10.1063/1.4806984

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study low-frequency noise in current passing through quantum point contacts fabricated from several GaAs/AlGaAs heterostructures with different layer structures and fabrication processes. In contrast to previous reports, there is no gate-dependent random telegraph noise (RTN) originating from tunneling through a Schottky barrier in devices fabricated using the standard low-damage process. Gate-dependent RTN appears only in devices fabricated with a high-damage process that induces charge trap sites. We show that the insertion of AlAs/GaAs superlattices in the AlGaAs barrier helps to suppress trap formation. Our results enable the fabrication of damage-resistant and thus low-noise devices. (C) 2013 AIP Publishing LLC.

引用

页数：4

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