Compact Modeling and Applications of Carbon Nanotube Field Effect Transistors CNTFETs based CMOS-like complementary NOR, OR, NAND, and AND Logic Gates

被引：0
|
作者：
I'Msaddak, Lobna [1 ]
Ben Issa, Dalenda [1 ]
Kachouri, Abdnnaceur [1 ]
机构：
[1] Sfax ENIS, Dept Elect Engn, Lab Elect & Technol Informat LETI, Sfax 3038, Tunisia
来源：
2013 8TH INTERNATIONAL CONFERENCE ON DESIGN & TECHNOLOGY OF INTEGRATED SYSTEMS IN NANOSCALE ERA (DTIS) | 2013年
关键词：
Carbon nanotube field effect transistors (CNTFET); Compact model; SPICE; NOT; NAND2; NOR2; OR2; AND2; NAND3 and NOR3 gates;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, CMOS architectures for NOT, AND, OR, NOR and NAND gates were proposed using C-CNTFETs and their operational characteristics were checked using the simulator SPICE. The CNTFETs utilize a semiconducting Carbon nanotube (CNT) channel controlled by isolated electrostatic gates. Circuit-compatible model of conventional CNTFET, which demonstrates p-type or n-type switching behavior depending on the gate voltage, is implemented in SPICE and the designs are extensively simulated in SPICE. The power and delay performance of CNTFETs were investigated in basic logic gates for D-CNT=1.42 nm on this SPICE model.
引用
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页码：176 / 177
页数：2
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