New Module Efficiency Record: 23.5% under 1-Sun Illumination Using Thin-film Single-junction GaAs Solar Cells

被引：0

作者：

Mattos, Laila S. ^{[1
]}

Scully, Shawn R. ^{[1
]}

Syfu, Maria ^{[1
]}

Olson, Eric ^{[1
]}

Yang, Linlin ^{[1
]}

Ling, Chris ^{[1
]}

Kayes, Brendan M. ^{[1
]}

He, Gang ^{[1
]}

机构：

[1] Alta Devices Inc, Santa Clara, CA USA

来源：

2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2012年

关键词：

Gallium arsenide; photovoltaic cells; flexible electronics; thin film devices; solar energy; solar power generation;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Alta Devices has fabricated a thin-film singlejunction GaAs module with an independently confirmed solar energy conversion efficiency of 23.5%, under the global AM1.5 spectrum at one sun intensity. This represents a new record for terrestrial modules under non-concentrated sunlight. Reduced shading, intrinsic electrical interconnect, optimized optical coupling, and high efficiency solar cells all contributed to the unmatched performance of this module. Behind these attributes lies the thin and flexible nature of Alta's solar material, which enables high conversion efficiency at the cell and module levels. Because of its thin-film characteristics, this module technology has the potential to reduce the cost of solar energy generation beyond grid parity. The unique combination of a flexible form factor and high performance in outdoor environments makes this technology extremely competitive for both traditional solar installations as well as a variety of advanced photovoltaic (PV) applications.

引用

页码：3187 / 3190

页数：4