共 50 条
Direct Room Temperature Welding and Chemical Protection of Silver Nanowire Thin Films for High Performance Transparent Conductors
被引:163
|作者:
Ge, Yongjie
[1
]
Duan, Xidong
[1
]
Zhang, Meng
[1
]
Mei, Lin
[1
]
Hu, Jiawen
[1
]
Hu, Wei
[2
]
Duan, Xiangfeng
[1
,3
]
机构:
[1] Hunan Univ, Coll Chem & Chem Engn, State Key Lab Chemo Biosensing & Chemometr, Changsha 410082, Hunan, Peoples R China
[2] Hunan Univ, Sch Phys & Elect, Changsha 410082, Hunan, Peoples R China
[3] Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90095 USA
基金:
中国国家自然科学基金;
关键词:
SELF-ASSEMBLED MONOLAYERS;
SODIUM-BOROHYDRIDE;
INFRARED-SPECTROSCOPY;
POLYOL SYNTHESIS;
GRAPHENE;
NANOPARTICLES;
TRANSISTORS;
GROWTH;
GOLD;
AG;
D O I:
10.1021/jacs.7b07851
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
Silver nanowire (Ag-NW) thin films have emerged as a promising next-generation transparent electrode. However, the current Ag-NW thin films are often plagued by high NW-NW contact resistance and poor long-term stability, which can be largely attributed to the ill-defined polyvinylpyrrolidone (PVP) surface ligands and nonideal Ag-PVP-Ag contact at NW-NW junctions. Herein, we report a room temperature direct welding and chemical protection strategy to greatly improve the conductivity and stability of the Ag-NW thin films. Specifically, we use a sodium borohydride (NaBH4) treatment process to thoroughly remove the PVP ligands and produce a clean Ag-Ag interface that allows direct welding of NW-NW junctions at room temperature, thus greatly improving the conductivity of the Ag-NW films, outperforming those obtained by thermal or plasmonic thermal treatment. We further show that, by decorating the as-formed Ag-NW thin film with a dense, hydrophobic dodecanethiol layer, the stability of the Ag-NW film can be greatly improved by 150-times compared with that of PVP-wrapped ones. Our studies demonstrate that a proper surface ligand design can effectively improve the conductivity and stability of Ag-NW thin films, marking an important step toward their applications in electronic and optoelectronic devices.
引用
收藏
页码:193 / 199
页数:7
相关论文