Metal-Organic Frameworks: New Interlayer Dielectric Materials

被引:63
|
作者
Usman, Muhammad [1 ,2 ,3 ]
Mendiratta, Shruti [1 ]
Lu, Kuang-Lieh [1 ]
机构
[1] Acad Sinica, Inst Chem, Taipei 115, Taiwan
[2] Acad Sinica, Inst Atom & Mol Sci, Taiwan Int Grad Program, Mol Sci & Technol Program, Taipei, Taiwan
[3] Natl Cent Univ, Dept Phys, Zhongli 320, Taiwan
来源
CHEMELECTROCHEM | 2015年 / 2卷 / 06期
关键词
dielectric properties; inorganic chemistry; integrated circuits; metal-organic framework; microelectronics; COORDINATION POLYMER; CONSTANT; BEHAVIOR;
D O I
10.1002/celc.201402456
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Some metal-organic frameworks (MOFs) with low dielectric constants, high thermal/mechanical stabilities, low leakage currents, and good comparability in devices can lead to integrated circuits, in which the MOF can act as an interlayer dielectric (ILD) material with tunable structural properties and high porosity. Based on initial research, in this Highlight, we propose a roadmap that can serve as a starting point for addressing the potential use of MOFs as ILD materials in the microelectronics industry, providing an effective path towards achieving remarkable new applications of dielectric MOFs in the future.
引用
收藏
页码:786 / 788
页数:3
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