GaN HEMT Darlington Power Amplifier with Independent Biasing for High-Efficiency Low-Distortion Wide-Dynamic-Range Adjustment

被引：0
|
作者：
Kitamura, Atsushi [1 ]
Takayama, Yoichiro [1 ]
Ishikawa, Ryo [1 ]
Honjo, Kazuhiko [1 ]
机构：
[1] Univ Electrocommun, 1-5-1 Chofugaoka, Chofu, Tokyo, Japan
来源：
2018 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC) | 2018年
关键词：
Darlington; GaN HEMT; power amplifier; high efficiency; low distortion;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Wide-dynamic-range operation for high-efficiency and low-distortion characteristics has been realized with a novel independently biased GaN HEMT Darlington power amplifier. The nonlinearity of each GaN HEMT has been successfully cancelled to reduce third-order inter-modulation distortion (IMD3) for the wide dynamic range by means of independently adjusting each gate bias voltage. Without affecting the IMD3, power-added efficiency (PAE) can be optimized with independent drain voltage supplies. Thus, high-efficiency and low-distortion characteristics can be simultaneously realized with the proposed Darlington power amplifier. The fabricated GaN HEMT Darlington power amplifier exhibited a PAE of 36% and an IMD3 of -35 dBc with an output power of 30 dBm at 1.45 GHz. A high quality of 64-QAM constellations has been retained for an output power range from 20 to 32 dBm.
引用
收藏
页码：458 / 460
页数：3
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