Electrical and optical properties of copper oxide films prepared by reactive RF magnetron sputtering

被引：130
|
作者：
Parretta, A [1 ]
Jayaraj, MK [1 ]
DiNocera, A [1 ]
Loreti, S [1 ]
Quercia, L [1 ]
Agati, A [1 ]
机构：
[1] COCHIN UNIV SCI & TECHNOL,DEPT PHYS,COCHIN 682022,KERALA,INDIA
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1996年 / 155卷 / 02期
关键词：
D O I：
10.1002/pssa.2211550213
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Copper oxide thin films were prepared by reactive rf magnetron sputtering of a pure copper target in an oxygen-argon atmosphere. The phases of the deposited films strongly depend on the oxygen content in the sputtering gas. X-ray diffraction studies show that by controlling the oxygen partial pressure single phase Cu2O and CuO can be obtained. The resistivity of the Cu2O film in the present study is 43 Omega cm. The optical constants were evaluated from transmission and reflection measurements.
引用
收藏
页码：399 / 404
页数：6
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