Wet chemical etching method for BST thin films annealed at high temperature

被引:9
|
作者
Zhang, R. T. [1 ]
Yang, C. R. [1 ]
Yu, A. [1 ]
Wang, B. [1 ]
Tang, H. J. [1 ]
Chen, H. W. [1 ]
Zhang, J. H. [1 ]
机构
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
关键词
RF magnetron sputtering; wet chemical etching; annealing temperature;
D O I
10.1016/j.apsusc.2008.05.233
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
As a traditional etchant, pure buffered hydrofluoric acid (BHF), does not possess the ability to etch BST thin films annealed at high temperature, even though it works greatly on as-deposited Ba(0.5)Sr(0.5)TiO(3) (BST) films. In this paper, we developed an etchant by mixing BHF and strong acid (HNO(3), HCl, H(2)SO(4) and H(3)PO(4)) and use it successfully on BST films annealed with high temperature. The experimental results show that a 1-8 wt% of strong acid acts as an efficient catalyst and the etching speed is significantly improved. The etched BST films show little distortions and smooth etching edges were recorded. (C) 2008 Elsevier B. V. All rights reserved.
引用
收藏
页码:6697 / 6700
页数:4
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