High Performance SiC MOSFET Module for Industrial Applications

被引：0

作者：

Stevanovic, Ljubisa ^{[1
]}

Rowden, Brian ^{[1
]}

Harfman-Todorovic, Maja ^{[1
]}

Losee, Peter ^{[1
]}

Bolotnikov, Alexander ^{[1
]}

Kennedy, Stacey ^{[1
]}

Schuetz, Tobias ^{[1
]}

Carastro, Fabio ^{[1
]}

Datta, Rajib ^{[1
]}

Tao, Fengfeng ^{[1
]}

Raju, Ravi ^{[1
]}

Cioffi, Philip ^{[1
]}

机构：

[1] GE Global Res, Adv Technol Off, Niskayuna, NY 12309 USA

来源：

2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2016年

关键词：

SiC MOSFET; Power Module; Low Inductance; Ruggedness; Short Circuit; High Efficiency; High Frequency; Industrial Applications;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

A novel 1.7kV, 5110A low inductance half-bridge module has been developed for fast-switching SiC devices. The module has a maximum temperature rating of 175 degrees C. There are 12 GE SiC MOSFET chips per switch and the MOSFET's body diode is utilized as the freewheeling diode. The module's typical on-resistance is 3.8mOhms at 25 degrees C and 5.8mOhms at 175 degrees C. Internal loop inductance measured from DC input terminaLs is 4.5nH, approximately 75% lower than that of a standard IGBT module. When connected to a low inductance busbars, the module can be switched in 50ns without excessive voltage and current overshoots. Double pulse inductive switching losses at V-DS=1000V, I-D=450A and T-J=150 degrees C are: E-ON=21.5mJ, E-OFF=16.5mJ and E-REC=6mJ. The losses are at least ten times lower when compared to a similarly rated IGBT module, highlighting the SiC advantage for higher switching frequency applications. Short circuit testing was performed, demonstrating good ruggedness albeit the need for a fast protection circuit.

引用

页码：479 / 482

页数：4

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