Single-crystal copper films on sapphire

被引：2

作者：

Janssen, G. C. A. M. ^{[1
]}

van der Pers, N. M. ^{[2
]}

Hendrikx, R. W. A. ^{[2
]}

Bottger, A. J. ^{[2
]}

Kwakernaak, C. ^{[2
]}

Rieger, B. ^{[3
]}

Sluiter, M. H. F. ^{[2
]}

机构：

[1] Delft Univ Technol, Precis & Microsyst Engn, 3ME, Mekelweg 2, NL-2628 CD Delft, Netherlands

[2] Delft Univ Technol, Mat Sci & Engn, 3ME, Mekelweg 2, NL-2628 CD Delft, Netherlands

[3] Delft Univ Technol, Imaging Phys, Appl Sci, Lorentzweg 1, NL-2628 CJ Delft, Netherlands

来源：

THIN SOLID FILMS | 2020年 / 709卷

关键词：

Sapphire; Aluminum trioxide; Corundum; Copper; Thin film; Single-crystal; Oxygen; Dissolution;

D O I：

10.1016/j.tsf.2020.138137

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single-crystal copper films on sapphire have recently been reported upon in relation to graphene growth on these films. In the present paper the kinetics of the formation of single crystal copper films is investigated. We demonstrate the importance of heating the sapphire substrate in 1000 hPa oxygen, followed by a fast cooling prior to depositing the copper film. The importance of this treatment is tentatively explained by the dissolution of oxygen in sapphire and subsequent out-diffusion during recrystallization of the copper film to form a copper-oxide interface layer. Also, the importance of avoiding oxygen incorporation in the sputter deposited film is demonstrated.

引用

页数：7

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