Single-Crystal Growth of Sapphire

被引：67
|
作者：
Cockayne, B. [1 ]
Chesswas, M. [1 ]
Gasson, D. B. [1 ]
机构：
[1] Royal Radar Estab, Malvern, Worcs, England
来源：
JOURNAL OF MATERIALS SCIENCE | 1967年 / 2卷 / 01期
关键词：
D O I：
10.1007/BF00550046
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Two techniques are described by which single crystals of sapphire may be grown. One is a development of the vertical-pulling technique for the production of scatter-free, low-dislocation-density material, whilst the other is an extension of a floating-zone, recrystallisation technique previously used for calcium tungstate. The origin and control of defects in crystals grown by these techniques are discussed.
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页码：7 / 11
页数：5
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