Intrinsic spin noise in MgO magnetic tunnel junctions

被引：1
|
作者：
Delgado, F. [1 ]
Lopez, K. [2 ,3 ]
Ferreira, R. [1 ]
Fernandez-Rossier, J. [1 ,4 ]
机构：
[1] Int Iberian Nanotechnol Lab INL, P-4715330 Braga, Portugal
[2] MIT, Dept Mech Engn, Cambridge, MA 02139 USA
[3] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA
[4] Univ Alicante, Dept Fis Aplicada, San Vicente Del Raspeig 03690, Spain
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 06期
关键词：
ROOM-TEMPERATURE; V-CENTER; MAGNETORESISTANCE;
D O I：
10.1063/1.4791594
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We consider two intrinsic sources of noise in ultra-sensitive magnetic field sensors based on MgO magnetic tunnel junctions, coming both from Mg-25 nuclear spins (I = 5/2, 10% natural abundance) and S = 1 Mg-vacancies. While nuclear spins induce noise peaked in the MHz frequency range, the vacancies noise peaks in the GHz range. We find that the nuclear noise in submicron devices has a similar magnitude than the 1/f noise, while the vacancy-induced noise dominates in the GHz range. Interestingly, the noise spectrum under a finite magnetic field gradient may provide spatial information about the spins in the MgO layer. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4791594]
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页数：4
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