Vacancy defects in epitaxial thin film CuGaSe2 and CuInSe2

被引：26
|
作者：
Korhonen, E. [1 ]
Kuitunen, K. [1 ]
Tuomisto, F. [1 ]
Urbaniak, A. [2 ]
Igalson, M. [2 ]
Larsen, J. [3 ]
Guetay, L. [3 ]
Siebentritt, S. [3 ]
Tomm, Y. [4 ]
机构：
[1] Aalto Univ, Dept Appl Phys, FI-00076 Aalto, Finland
[2] Warsaw Univ Technol, Fac Phys, PL-00662 Warsaw, Poland
[3] Univ Luxembourg, L-4422 Belvaux, Luxembourg
[4] Helmholtz Ctr Berlin Mat & Energy, D-14109 Berlin, Germany
来源：
PHYSICAL REVIEW B | 2012年 / 86卷 / 06期
基金：
芬兰科学院;
关键词：
POSITRON-ANNIHILATION; DISTRIBUTIONS; GAAS;
D O I：
10.1103/PhysRevB.86.064102
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Epitaxial thin film CuGaSe2 and CuInSe2 samples grown on GaAs substrates with varying [Cu]/[Ga,In] ratios were studied using positron annihilation Doppler-broadening spectroscopy and were compared to bulk crystals. We find both Cu monovacancies and Cu-Se divacancies in CuInSe2, whereas, in CuGaSe2, the only observed vacancy defect is the Cu-Se divacancy.
引用
收藏
页数：5
相关论文
共 50 条
  • [41] X-Ray Fluorescence Holography Analysis of Local Structure in CuInSe2 and CuGaSe2
    Shirakata, Sho
    Happo, Naohisa
    Hosokawa, Shinya
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2019, 216 (15):
  • [42] Benefits of oxygen in CuInSe2 and CuGaSe2 containing Se-rich grain boundaries
    Feng, Chunbao
    Luo, Min
    Li, Bolin
    Li, Dengfeng
    Nie, Jinlan
    Dong, Huining
    [J]. PHYSICS LETTERS A, 2014, 378 (28-29) : 1956 - 1960
  • [43] Kinetics of the reactive crystallization of CuInSe2 and CuGaSe2 chalcopyrite films for solar cell applications
    Purwins, M
    Weber, A
    Berwian, P
    Müller, G
    Hergert, F
    Jost, S
    Hock, R
    [J]. JOURNAL OF CRYSTAL GROWTH, 2006, 287 (02) : 408 - 413
  • [44] Investigation of CuGaSe2/CuInSe2 double heterojunction interfaces grown by molecular beam epitaxy
    Thiru, Sathiabama
    Asakawa, Masaki
    Honda, Kazuki
    Kawaharazuka, Atsushi
    Tackeuchi, Atsushi
    Makimoto, Toshiki
    Horikoshi, Yoshiji
    [J]. AIP ADVANCES, 2015, 5 (02):
  • [45] Microstructural study of the CdS/CuGaSe2 interfacial region in CuGaSe2 thin film solar cells
    Nadenau, V
    Hariskos, D
    Schock, HW
    Krejci, M
    Haug, FJ
    Tiwari, AN
    Zogg, H
    Kostorz, G
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (01) : 534 - 542
  • [46] Intrinsic point defects in CuInSe2 and CuGaSe2 as seen via screened-exchange hybrid density functional theory
    Pohl, Johan
    Albe, Karsten
    [J]. PHYSICAL REVIEW B, 2013, 87 (24)
  • [47] XPS and raman investigations of nitrogen ion etching for depth profiling of CuInSe2 and CuGaSe2
    Otte, K
    Lippold, G
    Hirsch, D
    Schindler, A
    Bigl, F
    [J]. THIN SOLID FILMS, 2000, 361 : 498 - 503
  • [48] Defects in CuGaSe2 thin films grown by MOCVD
    Bauknecht, A
    Siebentritt, S
    Gerhard, A
    Harneit, W
    Brehme, S
    Albert, J
    Rushworth, S
    Lux-Steiner, MC
    [J]. THIN SOLID FILMS, 2000, 361 : 426 - 431
  • [49] First-principles study on magnetic tunneling junctions with semiconducting CuInSe2 and CuGaSe2 barriers
    Masuda, Keisuke
    Miura, Yoshio
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (02)
  • [50] NEW TYPE OF MICROSTRUCTURE IN POLYCRYSTALLINE CUINSE2, CUGASE2 FILMS AND ITS POSSIBLE IMPLICATION FOR PHOTOVOLTAICS
    MARGULIS, L
    JAKUBOWICZ, A
    HODES, G
    CAHEN, D
    [J]. ULTRAMICROSCOPY, 1990, 32 (02) : 188 - 189
12345