Vacancy defects in epitaxial thin film CuGaSe2 and CuInSe2

被引:26
|
作者
Korhonen, E. [1 ]
Kuitunen, K. [1 ]
Tuomisto, F. [1 ]
Urbaniak, A. [2 ]
Igalson, M. [2 ]
Larsen, J. [3 ]
Guetay, L. [3 ]
Siebentritt, S. [3 ]
Tomm, Y. [4 ]
机构
[1] Aalto Univ, Dept Appl Phys, FI-00076 Aalto, Finland
[2] Warsaw Univ Technol, Fac Phys, PL-00662 Warsaw, Poland
[3] Univ Luxembourg, L-4422 Belvaux, Luxembourg
[4] Helmholtz Ctr Berlin Mat & Energy, D-14109 Berlin, Germany
基金
芬兰科学院;
关键词
POSITRON-ANNIHILATION; DISTRIBUTIONS; GAAS;
D O I
10.1103/PhysRevB.86.064102
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Epitaxial thin film CuGaSe2 and CuInSe2 samples grown on GaAs substrates with varying [Cu]/[Ga,In] ratios were studied using positron annihilation Doppler-broadening spectroscopy and were compared to bulk crystals. We find both Cu monovacancies and Cu-Se divacancies in CuInSe2, whereas, in CuGaSe2, the only observed vacancy defect is the Cu-Se divacancy.
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页数:5
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