Transient reverse current phenomenon in a p-n heterojunction comprised of poly(3,4-ethylene-dioxythiophene):poly(styrene-sulfonate) and ZnO nanowall

被引:55
|
作者
Maeng, Jongsun [1 ]
Jo, Minseok [1 ]
Kang, Seok-Ju [1 ]
Kwon, Min-Ki [1 ]
Jo, Gunho [1 ]
Kim, Tae-Wook [1 ]
Seo, Jaeduck [1 ]
Hwang, Hyunsang [1 ]
Kim, Dong-Yu [1 ]
Park, Seong-Ju [1 ]
Lee, Takhee [1 ]
机构
[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea
关键词
D O I
10.1063/1.2990225
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the characteristics of a p-n heterojunction diode comprised of a poly (3,4-ethylene-dioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) as the hole-conducting p-type polymer and n-type ZnO nanowall networks. ZnO nanowall networks were synthesized on a GaN/sapphire substrate without metal catalyst using hot-wall type metal organic chemical vapor deposition. The p-n heterojunction diodes of PEDOT:PSS/ZnO nanowall exhibited a space charge limited current phenomena at forward bias and a transient reverse current recovery when a sudden reverse bias was applied from the forward bias condition. The minority carrier lifetime was estimated to be similar to 2.5 mu s. (C) 2008 American Institute of Physics.
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页数:3
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