Dielectric and ferroelectric properties of K2Pb4Nb10O30-Na2Pb4Nb10O30-K6W4Nb6O30 across morphotropic phase region

被引:7
|
作者
Mehdiyeva, Rafiga Z. [1 ]
Mammadov, Ali I. [1 ]
Jabarov, Sakin H. [1 ]
Demirci, Niyazi [2 ]
Coskun, Tuba [2 ]
Seyidov, MirHasan Yu. [1 ,2 ]
机构
[1] Azerbaijan Natl Acad Sci, Inst Phys, AZ-1143 Baku, Azerbaijan
[2] Gebze Tech Univ, Dept Phys, TR-41400 Gebze, Kocaeli, Turkey
关键词
Ferroelectricity; Insulators; Chemical synthesis; X-ray diffraction; Grain boundaries; Dielectric response; LEAD-FREE CERAMICS; PIEZOELECTRIC PROPERTIES; RELAXATION; CRYSTALS; MICROSTRUCTURE; TEMPERATURE; TRANSITION; PB2KNB5O15; SYSTEM; OXIDE;
D O I
10.1016/j.jallcom.2015.05.109
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Ferroelectric ceramics of K2Pb4Nb10O30-Na2Pb4Nb10O30-K6W4Nb6O30 (abbreviated to KPN-NPN-KWN) were synthesized by using a high-temperature solid-state reaction technique. Phase structure, dielectric and ferroelectric properties of the ceramics with composition passing across the morphotropic phase (MP) region in the phase diagram were mainly investigated. Temperature dependence of dielectric constant (epsilon(T)) of KPN-NPN-KWN solid solutions with 30, 50 and 60-mol% NPN were investigated in detail. All samples were characterized by a broad dielectric maximum peak of epsilon(T) at the Curie temperature and weak frequency dielectric dispersion. All compositions exhibited classical diffuse phase transition of a relaxor ferroelectric with a broad peak of dielectric constant induced by the compositional disorder. The K1.36Na1.2Pb3.44W0.56Nb9.44O30 ceramic located on the line 60-mol% NPN in the region of rhombic phase in the vicinity of the MP-region exhibited a high dielectric constant (epsilon similar to 9700) at 1 kHz near the Curie temperature. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:496 / 503
页数:8
相关论文
共 50 条
  • [11] PHASE-TRANSITIONS IN FERROELECTRIC PB4LI2NB10O30
    FILIPEV, VS
    EREMKIN, VV
    GAGARINA, ES
    CHERNER, JE
    SMOTRAKOV, VG
    IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1990, 54 (04): : 805 - 808
  • [12] CHARACTER OF TEXTURE IN THE SHRINK CERAMICS - K2PB4NB10O30
    FILIPEV, VS
    ZAVYALOV, VP
    BUNINA, OA
    GAVRILYACHENKO, SV
    FESENKO, EG
    ZHURNAL TEKHNICHESKOI FIZIKI, 1984, 54 (03): : 633 - 638
  • [13] Structural and electrical properties of tetragonal tungsten bronze K4Bi2Nb10O30-Ba4Na2Nb10O30 solid solutions across two proximate phase transitions
    Londal, Nora Statle
    Zeiger, Caren Regine
    Grendal, Ola Gjonnes
    Einarsrud, Mari -Ann
    Walker, Julian
    Grande, Tor
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2024, 44 (13) : 7680 - 7688
  • [14] DIELECTRIC BEHAVIOR OF MODIFIED FERROELECTRIC BA4NA2NB10O30 CERAMICS
    RAO, PSVS
    RAO, KS
    BHANUMATHI, A
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1987, 6 (03) : 299 - 300
  • [15] Diffuse ferroelectric phase transition in Na2Pb2Sm2W2Ti4Nb4O30 ceramics
    Das, Piyush R.
    Choudhary, R. N. P.
    Samantray, B. K.
    MATERIALS CHEMISTRY AND PHYSICS, 2007, 101 (01) : 228 - 233
  • [16] Diffuse ferroelectric phase transition in Na2Pb2Nd2W2Ti4Nb4O30 ceramic
    Das, Piyush R.
    Choudhary, R. N. P.
    Samantray, B. K.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2008, 448 (1-2) : 32 - 37
  • [17] Double phase transitions in K2Pb2Sm2W2Ti4Nb4O30 ferroelectrics
    Padhee, R.
    Das, Piyush R.
    Parida, B. N.
    Choudhary, R. N. P.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 24 (11) : 4522 - 4529
  • [18] Double phase transitions in K2Pb2Sm2W2Ti4Nb4O30 ferroelectrics
    R. Padhee
    Piyush R. Das
    B. N. Parida
    R. N. P. Choudhary
    Journal of Materials Science: Materials in Electronics, 2013, 24 : 4522 - 4529
  • [19] PB4RB2NB10O30 FERROELECTRIC - NEW DATA ON THE STRUCTURE AND PHASE-TRANSITIONS
    GAGARINA, ES
    DEMIDOVA, VV
    IVANOVA, TI
    SAHNENKO, VP
    EREMKIN, VV
    SMOTRAKOV, VG
    IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 1993, 57 (03): : 167 - 170
  • [20] Electrical and Pyroelectric Properties of K2Pb2Gd2W2Ti4Nb4O30 Ferroelectrics
    R. Padhee
    Piyush R. Das
    B.N. Parida
    R.N.P. Choudhary
    Journal of Electronic Materials, 2013, 42 : 426 - 437