Determination of photoresist degradation products in O3/DI processing

被引：10
|
作者：
Vankerckhoven, H
De Smedt, F
Van Herp, B
Claes, M
De Gendt, S
Heyns, MM
Vinckier, C
机构：
[1] Katholieke Univ Leuven, Dept Chem, BE-3001 Louvain, Belgium
[2] IMEC, B-3001 Louvain, Belgium
来源：
OZONE-SCIENCE & ENGINEERING | 2002年 / 24卷 / 05期
关键词：
ozone; semiconductor processing; photoresist removal; carboxylic acids; ion chromatography;
D O I：
10.1080/01919510208901629
中图分类号：
X [环境科学、安全科学];
学科分类号：
08 ; 0830 ;
摘要：
Mainly because of cost-saving and environmental concerns, ozone has been introduced as a cleaning agent in semiconductor manufacturing in recent years. This work reports the determination of the most important degradation products formed after the stripping of two different types of photoresist (PR) (I-Line and DUV resist) by ozone processing. Six low molecular weight carboxylic acids could be identified for the I-line PR, five for the DUV PR. The behavior of these degradation products under continuous ozonation as well as their stability in water was also investigated. Despite the chemical similarity of these carboxylic acids, their behavior appears to be quite different.
引用
收藏
页码：391 / 398
页数：8
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