Silicon carbide nozzle for producing molecular beams

被引：1
|
作者：
Patrick, EL [1 ]
机构：
[1] Sci Syst & Applicat Inc, Lanham, MD 20706 USA
来源：
REVIEW OF SCIENTIFIC INSTRUMENTS | 2006年 / 77卷 / 04期
关键词：
D O I：
10.1063/1.2188907
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A resistively heated nozzle of silicon carbide (SiC) ceramic was developed for the production of high speed molecular beams for space environment simulation. The nozzle is able to withstand temperatures in excess of 1800 degrees C and pressures to 30 bars. In a seeded beam of 1% argon in 99% hydrogen, a speed of 3.9 km/s was achieved for the argon component at a nozzle temperature of 1150 degrees C and a pressure of 23 bars. (c) 2006 American Institute of Physics.
引用
收藏
页数：8
相关论文
共 50 条
  • [31] Doping of epitaxial silicon layers using molecular beams
    Perov, AS
    Perov, AA
    Perova, VI
    CRYSTALLOGRAPHY REPORTS, 1998, 43 (04) : 701 - 705
  • [32] Molecular dynamic study on crossover of equilibrium time of conduction for silicon/silicon and silicon/silicon carbide pairs on nanoscale
    Nie, Xianhua
    Zhao, Li
    Deng, Shuai
    Zhang, Yue
    INTERNATIONAL COMMUNICATIONS IN HEAT AND MASS TRANSFER, 2018, 98 : 85 - 95
  • [33] Stability and molecular pathways to the formation of spin defects in silicon carbide
    Elizabeth M. Y. Lee
    Alvin Yu
    Juan J. de Pablo
    Giulia Galli
    Nature Communications, 12
  • [34] Stability and molecular pathways to the formation of spin defects in silicon carbide
    Lee, Elizabeth M. Y.
    Yu, Alvin
    de Pablo, Juan J.
    Galli, Giulia
    NATURE COMMUNICATIONS, 2021, 12 (01)
  • [35] Silicon carbide fiber reinforced recrystallized silicon carbide
    Kriegesmann, J
    Schumacher, M
    EURO CERAMICS VIII, PTS 1-3, 2004, 264-268 : 1063 - 1066
  • [36] Molecular dynamics simulations of nano grinding of silicon carbide (SiC)
    Chen, Pei
    Liu, Chenshuo
    Qin, Fei
    ICEPT2019: THE 2019 20TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY, 2019,
  • [37] Molecular Dynamics Simulations of Primary Radiation Damage in Silicon Carbide
    Kucal, E.
    Czerski, K.
    Koziol, Z.
    ACTA PHYSICA POLONICA A, 2022, 142 (06) : 747 - 752
  • [38] Molecular dynamics simulation of displacement cascades in cubic silicon carbide
    Ran, Qin
    Zhou, Yi
    Zou, Yu
    Wang, Jun
    Duan, Zhengang
    Sun, Zhipeng
    Fu, Baoqin
    Gao, Shixin
    NUCLEAR MATERIALS AND ENERGY, 2021, 27
  • [39] Molecular dynamics study on grinding mechanism of polycrystalline silicon carbide
    Chen, Minghao
    Dai, Houfu
    DIAMOND AND RELATED MATERIALS, 2022, 130
  • [40] Molecular dynamic simulation of nanoindentation of silicon carbide by diamond tip
    Noreyan, A
    Marinescu, I
    Amar, J
    AMST 02: ADVANCED MANUFACTURING SYSTEMS AND TECHNOLOGY, PROCEEDINGS, 2002, (437): : 785 - 792
12345