Nitrogen passivation at GaAs:Al2O3 interfaces

被引：26
|
作者：
Guo, Yuzheng [1 ]
Lin, Liang [1 ]
Robertson, John [1 ]
机构：
[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 09期
关键词：
ENHANCEMENT; OXIDE; SEMICONDUCTOR; CHEMISTRY; CHANNEL; MOSFET;
D O I：
10.1063/1.4794898
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of nitrogen passivation at interfaces between III-V semiconductors and high dielectric constant oxides are calculated using the GaAs:Al2O3 interface as a model. Nitrogen replaces As from interface sites. The N-N dimer is found to be unstable and breaks into N dangling bonds. The N dangling bond has states lying well below the bulk valence band edge, away from the band gap, due to the electronegativity of nitrogen. Thus nitrogen is an effective passivant because it removes the states of two candidate species away from the gap. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794898]
引用
收藏
页数：4
相关论文
共 50 条
  • [41] Microstructure and modifications of Cu/Al2O3 interfaces
    Scheu, C
    Stein, W
    Klein, S
    Wagner, T
    Tomsia, AP
    Rühle, M
    ZEITSCHRIFT FUR METALLKUNDE, 2001, 92 (07): : 707 - 711
  • [42] Strain Engineering for the Kapitza Resistance of the ZrO2/α-Al2O3 and YSZ/α-Al2O3 Interfaces
    Xue, Yixuan
    Jiang, Jin-Wu
    ACTA MECHANICA SOLIDA SINICA, 2022, 35 (01): : 101 - 112
  • [43] Al-neal Degrades Al2O3 Passivation of Silicon Surface
    Setala, Olli E.
    Pasanen, Toni P.
    Ott, Jennifer
    Vahanissi, Ville
    Savin, Hele
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2021, 218 (23):
  • [44] STUDIES FOR AL2O3 FILMS AND COATED GAAS
    WANG, DH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C431 - C431
  • [45] GROWTH OF AL2O3 LAYER ON MBE GAAS
    HIROSE, M
    FISCHER, A
    PLOOG, K
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (02): : K175 - K177
  • [46] First-principles calculations of ?-Al2O3/Al interfaces
    Zhang, Xueyou
    Ji, Yanzhou
    Chen, Long-Qing
    Wang, Yi
    ACTA MATERIALIA, 2023, 252
  • [47] Structural features of the interfaces within Al2O3/Al composite
    Bai, Pucun
    Dai, Xiongjie
    Zhao, Chunwang
    Xing, Yongming
    Fuhe Cailiao Xuebao/Acta Materiae Compositae Sinica, 2008, 25 (01): : 88 - 93
  • [48] Effect of Ag interlayer on the optical and passivation properties of flexible and transparent Al2O3/Ag/Al2O3 multilayer
    Jeong, Jin-A.
    Kim, Han-Ki
    Yi, Min-Su
    APPLIED PHYSICS LETTERS, 2008, 93 (03)
  • [49] Effective surface passivation of crystalline silicon using ultrathin Al2O3 films and Al2O3/SiNx stacks
    Schmidt, Jan
    Veith, Boris
    Brendel, Rolf
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2009, 3 (09): : 287 - 289
  • [50] Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2
    Afanas'ev, V. V.
    Badylevich, M.
    Stesmans, A.
    Brammertz, G.
    Delabie, A.
    Sionke, S.
    O'Mahony, A.
    Povey, I. M.
    Pemble, M. E.
    O'Connor, E.
    Hurley, P. K.
    Newcomb, S. B.
    APPLIED PHYSICS LETTERS, 2008, 93 (21)
12345