XPS study of Mn thin films grown on GaAs(001) surfaces

被引：0
|
作者：
Dong, GS [1 ]
Xu, M [1 ]
Chen, Y [1 ]
Jin, XF [1 ]
Wang, X [1 ]
机构：
[1] FUDAN UNIV,TD LEE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA
来源：
SURFACE AND INTERFACE ANALYSIS | 1996年 / 24卷 / 09期
关键词：
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The composition-depth profile studies using x-ray photoelectron spectroscopy (XPS) are carried out for Mn thin films grown on GaAs(001) substrates at different substrate temperatures. The experimental results show that due to the interdiffusion and chemical reaction, an Mn-Ga-As mixed layer is formed between the Mn thin film and GaAs substrate. The thickness of the Mn-Ga-As mixed layer for the sample grown at 300 K is much thinner than that grown at 400 K. Because of the strong interdiffusion and chemical reaction, the overlayer on the GaAs substrate for the sample grown at 450 K is dominated by an Mn-Ga-As mixed layer, and no pure Mn area can be found on the top of the surface. The formation mechanism of gamma-Mn grown on GaAs(001) surfaces is discussed.
引用
收藏
页码：653 / 656
页数：4
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