High Voltage SiC Vertical JFET for High Power RF Applications

被引：0

作者：

Hecht, Christian ^{[1
]}

Elpelt, Rudolf ^{[1
]}

Schoerner, Reinhold ^{[1
]}

Irsigler, Roland ^{[2
]}

Heid, Oliver ^{[2
]}

机构：

[1] Infineon Technol AG, Schottkystr 10, D-91058 Erlangen, Germany

[2] Siemens AG, Corp Technol, D-91052 Erlangen, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

关键词：

SiC; JFET; RF module; high-frequency; switching; power; high-voltage;

D O I：

10.4028/www.scientific.net/MSF.717-720.1037

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present the optimization of a standard lateral channel vertical JFET for high-frequency high-power applications. It will be shown that SiC JFETs are well suited to fulfill the requirements of certain RF applications when compared to silicon devices. Simulations covering the electrical characteristics will be given together with calculations considering the self-heating of the chip in pulsed-power applications and the corresponding decrease in saturation current. The gate-signal propagation will be analyzed for different chip layouts and the effect on switching speed will be described. Electrical results will demonstrate that the optimized JFET is suitable for RF-transmitter applications, like e.g. solid state RF modules as Klystron replacements in linear accelerators.

引用

页码：1037 / +

页数：2

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