Reversibly controlled magnetic domains of Co film via electric field driven oxygen migration at nanoscale

被引:11
|
作者
Dhanapal, Pravarthana [1 ,2 ]
Zhang, Tuo [1 ,2 ,3 ]
Wang, Baomin [1 ,2 ]
Yang, Huali [1 ,2 ]
Xuan, Haicheng [3 ]
Bi, Chong [4 ]
Wang, Weigang [4 ]
Li, Run-Wei [1 ,2 ,5 ]
机构
[1] Chinese Acad Sci, CAS Key Lab Magnet Mat & Devices, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
[2] Chinese Acad Sci, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
[3] Taiyuan Univ Technol, Coll Mat Sci & Engn, Key Lab Interface Sci & Engn Adv Mat, Minist Educ, Taiyuan 030024, Shanxi, Peoples R China
[4] Univ Arizona, Dept Phys, Tucson, AZ 85721 USA
[5] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
基金
国家重点研发计划; 中国国家自然科学基金;
关键词
MODULATION; ANISOTROPY;
D O I
10.1063/1.5087964
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electric field control of perpendicular magnetic anisotropy (PMA) can enable low power consumption for perpendicular magnetic random access memory devices. However, the tuning of PMA by the electric field in ferromagnetic metal thin films is less efficient and limited to the interface due to the screening effect. Alternatively, the magnetoionic effect can control PMA efficiently, which utilizes ion migrations over the surface of the ferromagnetic metal by interfacing it with the charge reservoir of oxygen ions like GdOx. In this paper, we report the reversibly controlled magnetic domains of PMA Co in the Pt/Co/GdOx trilayer via the electric field at the nanoscale using conductive atomic force microscopy and magnetic force microscopy (MFM). The magnetic domain phase values determined by MFM decrease and increase when negative and positive bias voltages of magnitude 4V are applied to the surface of GdOx, respectively. These results suggest a path toward control of PMA materials at the nanoscale by the electric field for information storage devices.
引用
收藏
页数:5
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