Surface structure of an ionic liquid with high-resolution Rutherford backscattering spectroscopy

被引:22
|
作者
Nakajima, K. [1 ]
Ohno, A. [1 ]
Suzuki, M. [1 ]
Kimura, K. [1 ]
机构
[1] Kyoto Univ, Dept Microengn, Sakyo Ku, Kyoto 6068501, Japan
关键词
Ionic liquid; Surface structure; High-resolution RBS; LITHIUM BATTERY ELECTROLYTE; X-RAY; MOLECULAR COMPOSITION; ELECTRODEPOSITION; SEMICONDUCTORS; ORIENTATION; METALS;
D O I
10.1016/j.nimb.2008.11.020
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The surface of an ionic liquid, trimethylpropylammonium bis(trifluoromethanesulfonyl)imide ([TMPA] [TFSI]), is observed by high-resolution Rutherford backscattering spectroscopy (HRBS). The composition depth profiles are derived from the observed HRBS spectra through spectrum simulation. The observed composition is in good agreement with the stoichiometric composition at depths larger than similar to 1 rim. The observed composition profiles, however, show pronounced structures at the surface. Fluorine profile has a sharp peak at similar to 0.1 nm and a broad peak at similar to 1.0 nm. The sulfur profile also has a peak at similar to 0.35 nm. These results indicate that the molecules show preferred orientations at the surface. From the observed profiles, it was concluded that the C, conformer of the [TFSI] anion is dominant over the C-2 conformer at the surface in contrast to bulk, where the C-2 conformer is known to be dominant. It was also found that C-1 conformers are oriented with their CF3 groups pointing toward the vacuum in the outermost molecular layer. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:605 / 609
页数:5
相关论文
共 50 条
  • [31] Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy
    Nakajima, K
    Joumori, S
    Suzuki, M
    Kimura, K
    Osipowicz, T
    Tok, KL
    Zheng, JZ
    See, A
    Zhang, BC
    APPLIED PHYSICS LETTERS, 2003, 83 (02) : 296 - 298
  • [32] THERMAL-OXIDATION OF SILICON STUDIED BY HIGH-RESOLUTION RUTHERFORD BACKSCATTERING
    GRANT, WA
    CHRISTODOULIDES, CE
    POGARIDES, DC
    WILLIAMS, JS
    JOURNAL OF RADIOANALYTICAL CHEMISTRY, 1979, 48 (1-2): : 277 - 286
  • [33] INITIAL-STAGE OF AG GROWTH ON SI(001) STUDIED BY HIGH-RESOLUTION RUTHERFORD-BACKSCATTERING SPECTROSCOPY
    KIMURA, K
    OHSHIMA, K
    MANNAMI, MH
    PHYSICAL REVIEW B, 1995, 52 (08): : 5737 - 5742
  • [34] Subsurface structures in initial stage of FeSi2 growth studied by high-resolution Rutherford backscattering spectroscopy
    Suzuki, Motofumi
    Kinoshita, Kohei
    Jomori, Shinji
    Harada, Hidehiko
    Nakajima, Kaoru
    Kimura, Kenji
    THIN SOLID FILMS, 2007, 515 (22) : 8281 - 8284
  • [35] High-resolution Rutherford backscattering spectrometry with an optimised solid-state detector
    Robson, S. G.
    Jakob, A. M.
    Holmes, D.
    Lim, S. Q.
    Johnson, B. C.
    Jamieson, D. N.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2021, 487 : 1 - 7
  • [36] Tungsten surface enrichment in EUROFER and Fe-W model systems studied by high-resolution time-of-flight rutherford backscattering spectroscopy
    Mayer, M.
    Silva, T. F.
    Arredondo, R.
    Balden, M.
    Bogdanovic-Radovic, I
    Hoeschen, T.
    Maier, H.
    Oberkofler, M.
    Ru, L.
    Siketic, Z.
    NUCLEAR MATERIALS AND ENERGY, 2018, 17 : 147 - 151
  • [37] Lattice distortion at SiO2/Si(001) interface studied with high-resolution rutherford backscattering spectroscopy/channeling
    Nakajima, K
    Suzuki, M
    Kimura, K
    Yamamoto, M
    Teramoto, A
    Ohmi, T
    Hattori, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4A): : 2467 - 2469
  • [38] Thickness dependence of In content of InGaN mixed films by high-resolution Rutherford backscattering spectrometry
    Sakuta, H
    Yamanaka, Y
    Kurai, S
    Taguchi, T
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 232 : 295 - 298
  • [39] APPLICATION OF HIGH-RESOLUTION RUTHERFORD BACKSCATTERING TO MEASUREMENT OF ION RANGES IN SI AND A1
    WILLIAMS, JS
    GRANT, WA
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 25 (01): : 55 - 56