Materials Informatics for Process and Material Co-optimization

被引:0
|
作者
Tanaka, Fumiaki [1 ]
Sato, Hiroshi [1 ]
Yoshii, Naoki [1 ]
Matsui, Hidefumi [2 ]
机构
[1] Tokyo Electron Ltd, Minato Ku, Akasaka Biz Tower,5-3-1 Akasaka, Tokyo 1076325, Japan
[2] Tokyo Electron Technol Solut Ltd, 650 Mitsuzawa,Hosaka Cho, Nirasaki City, Yamanashi 4070192, Japan
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中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In semiconductor manufacturing, fabrication processes and their materials should be properly co-optimized to achieve required processing results. Unfortunately, it is a very time-consuming procedure, because the number of possible combinations of process/material candidates is very large. Here, we develop a methodology for co-optimization of processes and their materials. We successfully constructed a prediction model for dry-etching of high-k materials (R-2 > 0.65). By trying only < 0.00001% of all possible process/material candidates with this model and Bayesian optimization, we can find new combinations of gasses and their processes for 15-20 times higher etching rates than that with a traditional gas/process condition.
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