Influence of gate-channel distance in low-noise InP HEMTs

被引：0

作者：

Nilsson, P. A. ^{[1
]}

Rodilla, H. ^{[1
]}

Schleeh, J. ^{[1
]}

Wadefalk, N. ^{[1
]}

Grahn, J. ^{[1
]}

机构：

[1] Chalmers, Dept Microtechnol & Nanosci MC2, S-41296 Gothenburg, Sweden

来源：

2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2013年

关键词：

InP HEMT; LNA; noise;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect on the electrical properties, relevant to noise, from the gate-channel distance (barrier layer thickness) in 130 nm gate-length InP HEMTs was investigated. An increased quality of pinch-off was seen in HEMTs with an 8 nm barrier layer thickness compared to an 11 nm barrier. For the 8 nm barrier material the gate leakage increased from 1 mu A/mm to 7 mu A/mm at -1 V gate bias.

引用

页数：2

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