Highly tunable topological system based on PbTe-SnTe binary alloy

被引:12
|
作者
Zhang, Cheng-Long [1 ]
Liang, Tian [1 ]
Ogawa, Naoki [1 ,2 ,3 ]
Kaneko, Yoshio [1 ]
Kriener, Markus [1 ]
Nakajima, Taro [1 ,5 ]
Taguchi, Yasujiro [1 ]
Tokura, Yoshinori [1 ,2 ,4 ]
机构
[1] RIKEN Ctr Emergent Matter Sci CEMS, Wako, Saitama 3510198, Japan
[2] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan
[3] Japan Sci & Technol Agcy JST, PRESTO, Kawaguchi, Saitama 3320012, Japan
[4] Univ Tokyo, Tokyo Coll, Tokyo 1138656, Japan
[5] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778561, Japan
关键词
CRYSTALLINE INSULATOR; PHASE-TRANSITION; TRANSPORT; CATALOG; STATES;
D O I
10.1103/PhysRevMaterials.4.091201
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Topological semimetals have been attracting great interest for their superb potentials. While many theoretical and experimental investigations have been performed for topological semimetals, their materials platform is still in demand. Here, we report a highly tunable materials system for topological semimetal, indium (In)-doped Pb1-xSnxTe. By exploring the crystals with varying Pb/Sn ratios and In doping levels, a phase formation with low carrier concentration, high mobility, and large anomalous Hall effect is found for a finite area of the composition between topological crystalline insulator and normal insulator at ambient pressure. Furthermore, the in-plane anomalous Hall effect as a hallmark of Berry-curvature generation is also observed at low temperatures, where optical second-harmonic generation reveals the breaking of inversion symmetry. These results show that there is a finite range of topological semimetal phase in the PbTe-SnTe binary alloy, providing a promising materials platform to investigate the versatile nature of topological semimetals.
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页数:8
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