(Mn, Sb)-doped PZT and Nb-doped PZT uncooled IR detectors

Mn and Sb-doped Pb(Zr, Ti)O-3 (PMSZT) and Nb-Doped PZT (PNZT) thin film infrared (IR) detectors have been integrated with Si substrates. A conducting YBCO layer in the IR detector was used as an atomic template for the epitaxial growth of the PMSZT and PNZT thin films, as well as a good IR reflector. The epitaxial PMSZT and PNZT thin films were self-polarized and exhibited pyroelectric current even without any additional poling. The PMSZT and PNZT detectors were examined as to their pyroelectric current in response to the detector temperature. Doping with Mn and Sb into PZT and doping with Nb into PZT have been shown not only to decrease the Curie temperature T-c, but also increases pyroelectric current significantly in comparison with that of PZT thin films. The PMSZT detectors show high figures of merit, F-v of 1768 cm(2)/C and F-d of 0.048 (cm(3)/J)(1/2) at 25 degrees C. The figures of merit increased with increasing temperature to the maximum values, F-v of 7700 cm(2)/C and F-d of 0.135 (cm(3)/J)(1/2) at -90 degrees C. The measured normalized detectivity DX, ranging from 2.5x10(8) to 6.0x10(8) cmHz(1/2)/W in the 2.5-19.5 mu m wavelength band, indicated that PPSZT detectors are suitable for broad band IR detector applications. A PMSZT IR detector array with a micro-bridge for thermal isolation has also been fabricated.