An overthreshold state of electron-hole plasma in GaAs at interband absorption of high-power picosecond light pulses

被引：15
|
作者：
Bronevoi, IL [1 ]
Krivonosov, AN [1 ]
Nalet, TA [1 ]
机构：
[1] RUSSIAN ACAD SCI,AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA
来源：
SOLID STATE COMMUNICATIONS | 1996年 / 98卷 / 10期
关键词：
semiconductors; optical properties; recombination; time-resolved optical spectroscopies;
D O I：
10.1016/0038-1098(96)00002-6
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
It has been shown experimentally that during the interband absorption of a high-power picosecond light pulse in GaAs, which is accompanied by abnormally fast recombination, there sets in an overthreshold state under which the spectral position of the border between enhancement and absorption only insignificantly exceeds the width of the band gap E(g) while optical properties and the energy distribution of charge carriers have peculiarities in the <(h)over bar omega> similar to E(g) range. Copyright (C) 1996 Elsevier Science Ltd
引用
收藏
页码：903 / 907
页数：5
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