Assessment of threshold switching dynamics in phase-change chalcogenide memories

被引：0
|
作者：
Ielmini, D [1 ]
Lacaita, AL [1 ]
Mantegazza, D [1 ]
Pellizzer, F [1 ]
Pirovano, A [1 ]
机构：
[1] Politecn Milan, Dipartimento Elettron & Informat, Milan, Italy
来源：
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST | 2005年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The electronic properties of amorphous chalcogenide materials to be used in a phase change memory (PCM) play a critical role in limiting the read/program speed and voltage of the cell. This work presents a comprehensive experimental analysis of the recovery transient of threshold voltage V-T after reset. It is shown that V-T displays a fast increase in the first 30 ns after reset, followed by a slower time evolution due to drift. The recovery behavior is explained in terms of a threshold switching model for amorphous chalcogenides. Finally, the recovery of the OFF-state resistance R is studied, in order to assess the resistance window of the PCM under fast read operation.
引用
收藏
页码：897 / 900
页数：4
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