A Graphene-Based Hot Electron Transistor

被引：209

作者：

Vaziri, Sam ^{[1
]}

Lupina, Grzegorz ^{[2
]}

Henkel, Christoph ^{[1
]}

Smith, Anderson D. ^{[1
]}

Ostling, Mikael ^{[1
]}

Dabrowski, Jarek ^{[2
]}

Lippert, Gunther ^{[2
]}

Mehr, Wolfgang ^{[2
]}

Lemme, Max C. ^{[1
,3
]}

机构：

[1] KTH Royal Inst Technol, Sch Informat & Commun Technol, S-16440 Kista, Sweden

[2] IHP, D-15236 Frankfurt, Oder, Germany

[3] Univ Siegen, D-57076 Siegen, Germany

来源：

NANO LETTERS | 2013年 / 13卷 / 04期

关键词：

Graphene; transistor; hot electrons; hot carrier transport; tunneling;

D O I：

10.1021/nl304305x

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call graphene base transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. Transfer characteristics of the GBTs show ON/OFF current ratios exceeding 10(4).

引用

页码：1435 / 1439

页数：5

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