High responsivity photodetector based on monolayer molybdenum disulfide (MoS2)

被引：0

作者：

Zhang, Tianyou ^{[1
]}

Chen, Yujie ^{[1
]}

Xu, Pengfei ^{[1
]}

Wu, Zeru ^{[1
]}

Zhang, Yanfeng ^{[1
]}

Liu, Lin ^{[1
]}

Yang, Chunchuan ^{[1
]}

Chen, Hui ^{[1
]}

Yu, Siyuan ^{[1
]}

机构：

[1] Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

来源：

2016 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP) | 2016年

基金：

高等学校博士学科点专项科研基金;

关键词：

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

High-responsivity ultra-sensitive photodetectors are crucial for a broad range of applications in various fields. This work demonstrates a highly sensitive photodetector fabricated by using monolayer molybdenum disulfide (MoS2), a promising semiconductor from the family of transition-metal dichalcogenide, showing a promising photoresponsivity (230 mA/W @532 nm) in the wavelength of visible light region.

引用

页数：3

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