Molecular beam epitaxy of Al doped n-ZnSe

被引：0
|
作者：
Takai, T [1 ]
Chang, JH [1 ]
Godo, K [1 ]
Hanada, T [1 ]
Yao, T [1 ]
机构：
[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2002年 / 229卷 / 01期
关键词：
D O I：
10.1002/1521-3951(200201)229:1<381::AID-PSSB381>3.0.CO;2-O
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Molecular beam epitaxy of Al doped n-type ZnSe is studied. Growth conditions such as Al cell temperature and substrate temperature are systematically examined. The electrical, optical and structural properties of ZnSe:Al layers are investigated. ZnSe:Al layers show high electron concentration of 8.37 x 10(18) cm(-3) with low electrical conductivity of 6.92 x 10(-3) Ohm cm along with high crystallinity.
引用
收藏
页码：381 / 384
页数：4
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