Potential barrier formed at n-ZnSe regrowth homointerface by molecular beam epitaxy

被引：0
|
作者：
Yamagata, Yuji [1 ]
Sawada, Takayuki [1 ]
Imai, Kazuaki [1 ]
Suzuki, Kazuhiko [2 ]
机构：
[1] Department of Applied Electronics, Hokkaido Inst. Technol., 7-15 M., Sapporo, Japan
[2] Department of Electrical Engineering, Hokkaido Inst. Technol., 7-15 M., Sapporo, Japan
来源：
Journal of Crystal Growth | 1999年 / 201卷
关键词：
Number:; -; Acronym:; MEXT; Sponsor: Ministry of Education; Culture; Sports; Science and Technology;
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页码：623 / 626
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