Optical and electrical spectroscopy of defects in low temperature grown GaAs

被引：1

作者：

Steen, C ^{[1
]}

Kiesel, P ^{[1
]}

Tautz, S ^{[1
]}

Krämer, S ^{[1
]}

Soubatch, S ^{[1
]}

Malzer, S ^{[1
]}

Döhler, GH ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Inst Tech Phys 1, D-91058 Erlangen, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 88卷 / 2-3期

关键词：

LT-GaAs; electron emission rate; AsGa-antisite defect;

D O I：

10.1016/S0921-5107(01)00903-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report oil a technique to characterize the deep defects in low temperature grown GaAs (LT-GaAs), based on a thin LT-GaAs layer embedded in the intrinsic zone of a pin diode, At this structure we have performed steady state and time dependent measurements of the n-channel conductance. Thus we yield information about the density, the activation energy, and the characteristic time constants of the deep defects. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：191 / 194

页数：4

共 50 条

[1] Investigation of defects in low-temperature-grown GaAs using optical transient spectroscopy
Zhang, YH
Lu, LW
Zhang, MH
Huang, Q
Bao, CL
Zhou, JM
[J]. JOURNAL OF CRYSTAL GROWTH, 2000, 220 (04) : 351 - 354
[2] Electrical properties of low temperature grown GaAs
Stellmacher, M
Nagle, J
Khirouni, K
Bourgoin, JC
[J]. DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 929 - 932
[3] n-Channel conductance spectroscopy of deep defects in low temperature grown GaAs
Steen, C
Kiesel, P
Tautz, S
Krämer, S
Soubatch, S
Malzer, S
Döhler, GH
[J]. PHYSICA B-CONDENSED MATTER, 2001, 308 (308-310) : 1177 - 1180
[4] Defects and defect behaviour in GaAs grown at low temperature
Stellmacher, M
Bisaro, R
Galtier, P
Nagle, J
Khirouni, K
Bourgoin, JC
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (06) : 440 - 446
[5] DEFECTS AND ARSENIC DISTRIBUTION IN LOW-TEMPERATURE-GROWN GAAS
HOZHABRI, N
KOYMEN, AR
SHARMA, SC
ALAVI, K
[J]. APPLIED SURFACE SCIENCE, 1995, 85 (1-4) : 311 - 314
[6] Native point defects in low-temperature-grown GaAs
[J]. Appl Phys Lett, 2 (279):
[7] OPTICAL AND ELECTRICAL CHARACTERIZATION OF CHEMICAL DEFECTS IN GAAS-LAYERS GROWN BY MBE
KOSCHEL, WH
SMITH, RS
HIESINGER, P
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) : 1336 - 1339
[8] NATIVE POINT-DEFECTS IN LOW-TEMPERATURE-GROWN GAAS
LIU, X
PRASAD, A
NISHIO, J
WEBER, ER
LILIENTALWEBER, Z
WALUKIEWICZ, W
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (02) : 279 - 281
[9] Optical and electrical characterization of low temperature grown GaInAs
Khirouni, K
Alaya, S
Nagle, J
Bourgoin, JC
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (09) : 1031 - 1035
[10] Study on ultrafast dynamics of low-temperature grown GaAs by optical pump and terahertz probe spectroscopy
Fan Zheng-Fu
Tan Zhi-Yong
Wan Wen-Jian
Xing Xiao
Lin Xian
Jin Zuan-Ming
Cao Jun-Cheng
Ma Guo-Hong
[J]. ACTA PHYSICA SINICA, 2017, 66 (08)

← 1 2 3 4 5 →