High-Frequency Voltage Noise of nanometric Schottky-Barrier Diodes and heterostructure barrier varactor in Cyclostationary Conditions

被引：0
|
作者：
Mahi, Fatima Zohra [1 ]
Varani, Luca [2 ]
Shiktorov, P. [3 ]
Starikov, E. [3 ]
机构：
[1] Univ Bechar, Phys Semicond Devices Lab, Bechar, Algeria
[2] Univ Montpellier 2, Inst Elect Sud, Montpellier, France
[3] Semicond Phys Inst, Vilnius, Lithuania
来源：
2011 21ST INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF) | 2011年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this contribution we propose an analytical approach for the calculation of the high-frequency noise spectrum of frequency multipliers based on n(+)n - metal Schottky-barrier diodes and n(+)n - barrier - nn(+) Heterostructure-barrier varactors. The model includes a diodes operating in series with a parallel resonant circuit to extract the harmonics generated in the terahertz frequency region.
引用
收藏
页码：216 / 219
页数：4
相关论文
共 50 条
  • [21] Analytical model of noise spectrum in Schottky-barrier diodes
    Shiktorov, P
    Starikov, E
    Gruzinskis, V
    Reggiani, L
    Varani, L
    Vaissière, JC
    Noise and Fluctuations, 2005, 780 : 759 - 762
  • [22] FREQUENCY-DEPENDENCE OF FORWARD CAPACITANCE VOLTAGE CHARACTERISTICS OF SCHOTTKY-BARRIER DIODES
    CHATTOPADHYAY, P
    RAYCHAUDHURI, B
    SOLID-STATE ELECTRONICS, 1993, 36 (04) : 605 - 610
  • [23] High-frequency capability of Schottky-barrier carbon nanotube FETs
    Castro, L. C.
    Pulfrey, D. L.
    John, D. L.
    NANOSCIENCE AND TECHNOLOGY, PTS 1 AND 2, 2007, 121-123 : 693 - 696
  • [24] A BALANCED FREQUENCY TRIPLER BASED ON SCHOTTKY-BARRIER DIODES
    GRUNENKOV, AA
    KALININ, BV
    KOROLEVA, NA
    TELECOMMUNICATIONS AND RADIO ENGINEERING, 1981, 35-6 (01) : 72 - 73
  • [25] GAAS SCHOTTKY-BARRIER VARACTOR DIODES FOR SUBMILLIMETER WAVELENGTH POWER-GENERATION
    CROWE, TW
    PEATMAN, WCB
    WINKLER, E
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 1991, 4 (01) : 49 - 53
  • [26] HIGH-VOLTAGE 4H-SIC SCHOTTKY-BARRIER DIODES
    RAGHUNATHAN, R
    ALOK, D
    BALIGA, BJ
    IEEE ELECTRON DEVICE LETTERS, 1995, 16 (06) : 226 - 227
  • [27] ON THE CURRENT-VOLTAGE CHARACTERISTICS OF EPITAXIAL SCHOTTKY-BARRIER DIODES
    CHUANG, CT
    SOLID-STATE ELECTRONICS, 1984, 27 (04) : 299 - 304
  • [28] TRANSIT-TIME EFFECTS IN THE NOISE OF SCHOTTKY-BARRIER DIODES
    TRIPPE, M
    BOSMAN, G
    VANDERZIEL, A
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1986, 34 (11) : 1183 - 1192
  • [29] INTERFACIAL STRESS AND EXCESS NOISE IN SCHOTTKY-BARRIER MIXER DIODES
    SHERRILL, GK
    MATTAUCH, RJ
    CROWE, TW
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1986, 34 (03) : 342 - 345
  • [30] NOISE-REDUCTION IN GAAS SCHOTTKY-BARRIER MIXER DIODES
    KATTMANN, KM
    CROWE, TW
    MATTAUCH, RJ
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1987, 35 (02) : 212 - 214
12345