High-Frequency Voltage Noise of nanometric Schottky-Barrier Diodes and heterostructure barrier varactor in Cyclostationary Conditions

被引：0
|
作者：
Mahi, Fatima Zohra [1 ]
Varani, Luca [2 ]
Shiktorov, P. [3 ]
Starikov, E. [3 ]
机构：
[1] Univ Bechar, Phys Semicond Devices Lab, Bechar, Algeria
[2] Univ Montpellier 2, Inst Elect Sud, Montpellier, France
[3] Semicond Phys Inst, Vilnius, Lithuania
来源：
2011 21ST INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF) | 2011年
关键词：
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this contribution we propose an analytical approach for the calculation of the high-frequency noise spectrum of frequency multipliers based on n(+)n - metal Schottky-barrier diodes and n(+)n - barrier - nn(+) Heterostructure-barrier varactors. The model includes a diodes operating in series with a parallel resonant circuit to extract the harmonics generated in the terahertz frequency region.
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收藏
页码：216 / 219
页数：4
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